Toyoda Gosei’s GaN Power Device Development Adopted in Japanese Ministry of the Environment CO2 Reduction Project
New technology contributes to carbon neutrality
Kiyosu, Japan, April 27, 2022: Toyoda Gosei Co., Ltd., has been selected as one of partners for the Japanese Ministry of the Environment (MoE)’s “FY2022 Project for Acceleration of Social Implementation and Dissemination of Components (GaN) and Materials (CNF) for Realizing Innovative CO2 Emission Reduction.” Together with Panasonic Corporation, Nagoya University, and Osaka University, the company will develop next-generation gallium nitride (GaN) power devices.
Power devices control power in industrial machinery, automobiles, home appliances and many other machines. Next-generation power devices will reduce loss during power control in renewable energy systems and electric vehicles. As the spread of these devices will help move the world toward carbon neutrality, Toyoda Gosei will leverage the knowledge of GaN it has cultivated in the development of blue LEDs and deep ultraviolet (UV-C) LEDs to develop practical GaN power devices in this industry-government-academia collaborative project.
The MoE project aims to develop vertical GaN power devices which can provide both high power and high-speed operation, using high-quality, large diameter, and low electrical resistance* GaN substrates developed by Toyoda Gosei, Osaka University and Panasonic Corporation. Nagoya University will develop high efficiency GaN inverters with these semiconductor chips, and implement them in battery electric vehicles and demonstrate their performance. Through the industry-government-academia collaboration, CO2 reduction effect will be verified.
*Low electrical resistance on substrates decreases power loss on GaN power devices.
GaN power device development process in MoE project